参数项参数值
参数项参数值
Gain Bandwidth Product fT40 MHz
Collector- Base Voltage VCBO450 V
Maximum DC Collector Current0.5 A
Collector- Emitter Voltage VCEO Max400 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO7 V
Width1.7 mm
Height1 mm
MXHTS85412999
Length3 mm
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Mounting StyleSMD/SMT
Package / CaseSOT-23F-3
Maximum Operating Temperature+ 150 C
CNHTS8541290000
ImageDiodes Incorporated ZXTN08400BFFTA
TARIC8541290000
PackagingReel
PackagingCut Tape
PackagingMouseReel
RoHS Details
SeriesZXTN08400
SubcategoryTransistors
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
BrandDiodes Incorporated
Product TypeBJTs - Bipolar Transistors
Unit Weight0.001270 oz
DescriptionBipolar Transistors - BJT NPN 400V Transistor
ManufacturerDiodes Incorporated
USHTS8541290095
Pd - Power Dissipation2000 mW
Moisture Sensitivity Level1 (Unlimited)