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ZXMN6A08E6TA
厂牌：DIODES(美台)
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000049875120
描述：场效应管(MOSFET) 1.1W 60V 2.8A 1个N沟道
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min6.6 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current3.5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time2.6 ns
Width1.8 mm
Rds On - Drain-Source Resistance80 mOhms
Transistor Type1 N-Channel
Height1.3 mm
Length3.1 mm
Mounting StyleSMD/SMT
Package / CaseSOT-26-6
PackagingReel
PackagingMouseReel
PackagingCut Tape
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
ProductMOSFET Small Signal
Factory Pack Quantity3000
BrandDiodes Incorporated
SeriesZXMN6A0
Channel ModeEnhancement
Product TypeMOSFET
DescriptionMOSFET 60V N-Chnl UMOS
ManufacturerDiodes Incorporated
ImageDiodes Incorporated ZXMN6A08E6TA
Product CategoryMOSFET
Fall Time4.6 ns
RoHS Details
Unit Weight0.000282 oz
SubcategoryMOSFETs
Pd - Power Dissipation1.1 W
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time2.1 ns
TypeMOSFET