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SI1016CX-T1-GE3
厂牌：VISHAY(威世)
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000049875144
描述：Trans MOSFET N/P-CH 20V 0.6A 6-Pin SC-89 T/R
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min1 S, 2 S
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage400 mV
TechnologySi
Id - Continuous Drain Current350 mA, 500 mA
Transistor PolarityN-Channel, P-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V
Typical Turn-On Delay Time9 ns, 11 ns
Rds On - Drain-Source Resistance396 mOhms, 756 mOhms
Transistor Type1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time10 ns, 26 ns
MXHTS85412999
KRHTS8541219000
Qg - Gate Charge1.3 nC, 1.65 nC
Mounting StyleSMD/SMT
Package / CaseSC-89-6
JPHTS8541290100
CAHTS8541290000
PackagingMouseReel
PackagingReel
PackagingCut Tape
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CNHTS8541290000
Factory Pack Quantity3000
BrandVishay Semiconductors
SeriesSI1
Channel ModeEnhancement
Product TypeMOSFET
DescriptionMOSFET 20V Vds 8V Vgs SC89-6 N&P PAIR
ManufacturerVishay
TARIC8541210000
ImageVishay Semiconductors SI1016CX-T1-GE3
Product CategoryMOSFET
Fall Time8 ns, 11 ns
RoHS Details
Unit Weight0.000106 oz
SubcategoryMOSFETs
Pd - Power Dissipation220 mW
USHTS8541210095
TradenameTrenchFET
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels2 Channel
Rise Time10 ns, 16 ns
Moisture Sensitivity Level1 (Unlimited)