参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min13 S
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current35 A
KRHTS8541299000
Vgs - Gate-Source Voltage- 20 V, + 20 V
JPHTS8541290100
Height2.4 mm
CAHTS8541290000
Length6.6 mm
Minimum Operating Temperature- 55 C
Product CategoryMOSFET
Typical Turn-On Delay Time16 ns
ImageSTMicroelectronics STD35NF06T4
Rds On - Drain-Source Resistance18 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time36 ns
Maximum Operating Temperature+ 175 C
Package / CaseTO-252-3
PackagingReel
PackagingCut Tape
PackagingMouseReel
DescriptionMOSFET N-Ch 60 Volt 35 Amp
Width6.2 mm
Mounting StyleSMD/SMT
TARIC8541210000
BrandSTMicroelectronics
Factory Pack Quantity2500
Qg - Gate Charge60 nC
Product TypeMOSFET
MXHTS85412101
ManufacturerSTMicroelectronics
RoHS Details
SeriesSTD35NF06
SubcategoryMOSFETs
USHTS8541290095
Channel ModeEnhancement
Fall Time15 ns
Unit Weight0.139332 oz
CNHTS8541210000
Pd - Power Dissipation55 W
TradenameSTripFET
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time8 ns
TypeMOSFET