参数项参数值
参数项参数值
DC Current Gain hFE Max1500 at - 10 mA, - 2 V
Gain Bandwidth Product fT250 MHz
Collector- Base Voltage VCBO- 12 V
Maximum DC Collector Current- 4 A
Collector- Emitter Voltage VCEO Max- 12 V
Continuous Collector Current- 4 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 7 V
Width1.7 mm
Collector-Emitter Saturation Voltage- 75 mV
Height1 mm
DC Collector/Base Gain hfe Min150 at - 6 A, - 2 V
Length3 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Package / CaseSOT-23F-3
JPHTS8541290100
CAHTS8541290000
PackagingReel
PackagingMouseReel
PackagingCut Tape
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CNHTS8541290000
Factory Pack Quantity3000
BrandDiodes Incorporated
SeriesZXTP07012
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT PNP 12V HIGH GAIN
ManufacturerDiodes Incorporated
TARIC8541290000
ImageDiodes Incorporated ZXTP07012EFFTA
Product CategoryBipolar Transistors - BJT
RoHS Details
Unit Weight0.001721 oz
SubcategoryTransistors
Pd - Power Dissipation2000 mW
USHTS8541290095