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SIHG30N60E-GE3
厂牌：VISHAY(威世)
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000049875198
描述：MOSFET 600V Vds 30V Vgs TO-247AC
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage4 V
TechnologySi
Id - Continuous Drain Current29 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time19 ns
Rds On - Drain-Source Resistance125 mOhms
Typical Turn-Off Delay Time63 ns
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge85 nC
Mounting StyleThrough Hole
Package / CaseTO-247-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingTube
Factory Pack Quantity500
CNHTS8541290000
BrandVishay / Siliconix
SeriesE
Channel ModeEnhancement
ManufacturerVishay
TARIC8541290000
Product CategoryMOSFET
DescriptionMOSFET 600V Vds 30V Vgs TO-247AC
ImageVishay / Siliconix SIHG30N60E-GE3
Fall Time36 ns
RoHS Details
Product TypeMOSFET
SubcategoryMOSFETs
Unit Weight0.211644 oz
USHTS8541290095
Pd - Power Dissipation250 W
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel
Rise Time32 ns