参数项参数值
参数项参数值
DC Current Gain hFE Max820
Gain Bandwidth Product fT140 MHz
Collector- Base Voltage VCBO120 V
Maximum DC Collector Current0.05 A
Collector- Emitter Voltage VCEO Max120 V
Continuous Collector Current50 mA
ConfigurationDual
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Width1.6 mm
Height1.1 mm
DC Collector/Base Gain hfe Min180
MXHTS85412999
Length2.9 mm
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541290000
PackagingReel
RoHS Details
SeriesIMX8
SubcategoryTransistors
BrandROHM Semiconductor
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT DUAL NPN 120V 50MA SOT-457
ManufacturerROHM Semiconductor
USHTS8541290095
Pd - Power Dissipation300 mW
Part # AliasesIMX8