参数项参数值
参数项参数值
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO180 V
Maximum DC Collector Current200 mA
Collector- Emitter Voltage VCEO Max160 V
ConfigurationDual
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Width1.6 mm
Height1.1 mm
MXHTS85412101
Length3 mm
CNHTS8541210000
Collector-Emitter Saturation Voltage200 mV
KRHTS8541219000
DC Collector/Base Gain hfe Min30 at 50 mA, 5 V
Minimum Operating Temperature- 55 C
JPHTS8541210101
CAHTS8541210000
Package / CaseSOT-26-6
PackagingMouseReel
PackagingCut Tape
PackagingReel
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
TARIC8541210000
RoHS Details
SubcategoryTransistors
ImageDiodes Incorporated DMMT5551-7-F
Factory Pack Quantity3000
SeriesDMMT5551
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT MATCHED NPN
USHTS8541210095
Unit Weight0.001058 oz
Pd - Power Dissipation300 mW