参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current40 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Rds On - Drain-Source Resistance3.2 mOhms
Width5.15 mm
Height1.04 mm
Length6.15 mm
MXHTS85412101
KRHTS8541219000
Qg - Gate Charge77 nC
Package / CasePowerPAK-SO-8
Mounting StyleSMD/SMT
JPHTS8541210101
Minimum Operating Temperature- 55 C
CAHTS8541210000
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CNHTS8541210000
PackagingMouseReel
PackagingReel
PackagingCut Tape
TARIC8541290000
ImageVishay Semiconductors SIR166DP-T1-GE3
Unit Weight0.017870 oz
SeriesSIR
Factory Pack Quantity3000
Product TypeMOSFET
Pd - Power Dissipation48 W
BrandVishay Semiconductors
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerVishay
DescriptionMOSFET 30V Vds 20V Vgs PowerPAK SO-8
TradenameTrenchFET, PowerPAK
USHTS8541290095
Number of Channels1 Channel