参数项参数值
参数项参数值
DC Current Gain hFE Max20
Maximum DC Collector Current1.5 A
Collector- Emitter Voltage VCEO Max400 V
Continuous Collector Current1.5 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO9 V
MXHTS85412999
Transistor TypeBipolar
Width3.8 mm
Height4.5 mm
Length4.8 mm
KRHTS8541299000
Package / CaseTO-92AP
CNHTS8541290000
Mounting StyleThrough Hole
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 150 C
TARIC8541290000
ManufacturerSTMicroelectronics
Factory Pack Quantity2000
Unit Weight0.008818 oz
BrandSTMicroelectronics
SeriesSTBV32
Product TypeRF Bipolar Transistors
Product CategoryRF Bipolar Transistors
DescriptionRF Bipolar Transistors PTD IGBT & IPM
SubcategoryTransistors
Pd - Power Dissipation1500 mW
USHTS8541290095
TypeRF Bipolar Small Signal