参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min3.5 S
TechnologySi
Vgs th - Gate-Source Threshold Voltage1.5 V
Transistor PolarityP-Channel
Id - Continuous Drain Current2.2 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Minimum Operating Temperature- 55 C
Length2.9 mm
Height1.45 mm
Typical Turn-On Delay Time5 ns
Rds On - Drain-Source Resistance290 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time18 ns
Package / CaseSOT-23-3
ImageVishay / Siliconix SQ2337ES-T1_GE3
PackagingMouseReel
PackagingReel
PackagingCut Tape
Width1.6 mm
Maximum Operating Temperature+ 175 C
BrandVishay / Siliconix
Mounting StyleSMD/SMT
Product CategoryMOSFET
SubcategoryMOSFETs
DescriptionMOSFET P-Channel 80V AEC-Q101 Qualified
ManufacturerVishay
Factory Pack Quantity3000
Qg - Gate Charge11.5 nC
RoHS Details
SeriesSQ
Product TypeMOSFET
Channel ModeEnhancement
Fall Time8 ns
Unit Weight0.000282 oz
Pd - Power Dissipation3 W
TradenameTrenchFET
Vds - Drain-Source Breakdown Voltage80 V
Number of Channels1 Channel
Rise Time10 ns