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SI7112DN-T1-GE3

SI7112DN-T1-GE3

厂牌：VISHAY(威世)
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000049875319
描述：MOSFET N-CH 30V 11.3A 1212-8
最新价格近期成交26单+
数量价格（含税）
1¥2.9334
100¥2.3445
750¥2.1000
1500¥1.9889
3000¥1.8889
库存：5交期：3-5Days起订：1增量：1
数量：
X
2.9334（单价）
合计：
￥2.93
商品满500包邮
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current17.8 A
KRHTS8541299000
Vgs - Gate-Source Voltage- 12 V, + 12 V
JPHTS8541290100
Height1.04 mm
CAHTS8541290000
Length3.3 mm
Minimum Operating Temperature- 55 C
Product CategoryMOSFET
ImageVishay Semiconductors SI7112DN-T1-GE3
Rds On - Drain-Source Resistance7.5 mOhms
Maximum Operating Temperature+ 150 C
Package / CasePowerPAK-1212-8
PackagingCut Tape
PackagingMouseReel
PackagingReel
DescriptionMOSFET 30V 17.8A 3.8W 7.5mohm @ 10V
Width3.3 mm
Mounting StyleSMD/SMT
TARIC8541290000
ManufacturerVishay
BrandVishay Semiconductors
Product TypeMOSFET
Qg - Gate Charge27 nC
Factory Pack Quantity3000
MXHTS85412999
RoHS Details
SubcategoryMOSFETs
SeriesSI7
USHTS8541290095
Channel ModeEnhancement
CNHTS8541290000
Part # AliasesSI7112DN-GE3
Pd - Power Dissipation3.8 W
TradenameTrenchFET
Number of Channels1 Channel