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商品参数
参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current10 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 25 V, + 25 V
Typical Turn-On Delay Time10 ns
Rds On - Drain-Source Resistance550 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time32 ns
MXHTS85412101
KRHTS8541299000
Qg - Gate Charge19 nC
Package / CaseTO-252-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingReel
PackagingMouseReel
CNHTS8541210000
BrandSTMicroelectronics
SeriesSTD10NM60N
Product CategoryMOSFET
Factory Pack Quantity2500
ManufacturerSTMicroelectronics
TARIC8541210000
Channel ModeEnhancement
Fall Time15 ns
RoHS Details
Product TypeMOSFET
DescriptionMOSFET N-channel 600 V Mdmesh 10A
ImageSTMicroelectronics STD10NM60N
Unit Weight0.139332 oz
SubcategoryMOSFETs
USHTS8541290095
Pd - Power Dissipation70 W
TradenameMDmesh
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel
Rise Time12 ns