DSS5540X-13

厂牌：DIODES(美台)

包装：--

类目：元器件 > 分立器件 > 双极晶体管

编号：B000049875386

描述：dbm供货查询数据Bipolar Transistors - BJT BIPOLAR TRANS PNPBipolar Transistors - BJT BIPOLAR TRANS PNP

商品参数

参数项参数值

Gain Bandwidth Product fT60 MHz

Collector- Base Voltage VCBO- 40 V

Maximum DC Collector Current- 10 A

Collector- Emitter Voltage VCEO Max- 40 V

Continuous Collector Current- 4 A

ConfigurationSingle

TechnologySi

Transistor PolarityPNP

Emitter- Base Voltage VEBO- 6 V

MXHTS85423901

CNHTS8541290000

KRHTS8541219000

DC Collector/Base Gain hfe Min250 at - 500 mA, - 2 V

Minimum Operating Temperature- 55 C

JPHTS8542390990

CAHTS8541210000

Package / CaseSOT-89-3

PackagingReel

PackagingCut Tape

PackagingMouseReel

Mounting StyleSMD/SMT

Maximum Operating Temperature+ 150 C

BrandDiodes Incorporated

ManufacturerDiodes Incorporated

TARIC8542399000

RoHS Details

SubcategoryTransistors

ImageDiodes Incorporated DSS5540X-13

Factory Pack Quantity2500

Product CategoryBipolar Transistors - BJT

Product TypeBJTs - Bipolar Transistors

DescriptionBipolar Transistors - BJT BIPOLAR TRANS PNP

USHTS8542390001

Unit Weight4.850170 oz

Pd - Power Dissipation900 mW