STQ1HNK60R-AP

STQ1HNK60R-AP

厂牌：ST(意法半导体)

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000049875411

描述：MOSFET N-Channel 600V 0.4A TO-92

商品参数

参数项参数值

参数项参数值

ConfigurationSingle

TechnologySi

Id - Continuous Drain Current400 mA

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 30 V, + 30 V

Typical Turn-On Delay Time6.5 ns

Width3.94 mm

Rds On - Drain-Source Resistance8.5 Ohms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time19 ns

Length4.95 mm

Height4.95 mm

MXHTS85412999

KRHTS8541299000

Qg - Gate Charge10 nC

Package / CaseTO-92-3

Mounting StyleThrough Hole

JPHTS8541290100

CAHTS8541290000

Maximum Operating Temperature+ 150 C

Minimum Operating Temperature- 55 C

PackagingAmmo Pack

CNHTS8541290000

BrandSTMicroelectronics

SeriesSTQ1HNK60R

Factory Pack Quantity2000

Channel ModeEnhancement

ManufacturerSTMicroelectronics

TARIC8541290000

Product CategoryMOSFET

RoHS Details

DescriptionMOSFET PTD HIGH VOLTAGE

Fall Time25 ns

ImageSTMicroelectronics STQ1HNK60R-AP

Product TypeMOSFET

SubcategoryMOSFETs

Unit Weight0.007760 oz

USHTS8541290095

Pd - Power Dissipation30 W

Vds - Drain-Source Breakdown Voltage600 V

Number of Channels1 Channel

Rise Time5 ns