参数项参数值
参数项参数值
Gain Bandwidth Product fT160 MHz
Collector- Base Voltage VCBO40 V
Maximum DC Collector Current2.5 A
Collector- Emitter Voltage VCEO Max20 V
Continuous Collector Current2.5 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO7.5 V
Width1.4 mm
Height1 mm
Length3.05 mm
MXHTS85412101
KRHTS8541219000
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
JPHTS8541210101
CAHTS8541210000
PackagingMouseReel
PackagingReel
PackagingCut Tape
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CNHTS8541210000
Factory Pack Quantity3000
BrandDiodes Incorporated
SeriesZXT11N20
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT 20V NPN SuperSOT4
ManufacturerDiodes Incorporated
ImageDiodes Incorporated ZXT11N20DFTA
TARIC8541210000
Product CategoryBipolar Transistors - BJT
RoHS Details
Unit Weight0.000282 oz
SubcategoryTransistors
Pd - Power Dissipation625 mW
USHTS8541210095