参数项参数值
参数项参数值
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO- 50 V
Maximum DC Collector Current- 100 mA
Collector- Emitter Voltage VCEO Max- 45 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Collector-Emitter Saturation Voltage- 650 mV
Width0.8 mm
Height0.75 mm
Length1.6 mm
MXHTS85412101
KRHTS8541219000
Package / CaseSOT-523-3
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
CAHTS8541210000
Minimum Operating Temperature- 55 C
CNHTS8541210000
PackagingReel
PackagingMouseReel
PackagingCut Tape
TARIC8541210000
Unit Weight0.000071 oz
RoHS Details
Pd - Power Dissipation150 mW
SeriesBC857C
ImageDiodes Incorporated BC857CT-7-F
BrandDiodes Incorporated
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
ManufacturerDiodes Incorporated
Product CategoryBipolar Transistors - BJT
USHTS8541210075
DescriptionBipolar Transistors - BJT PNP BIPOLAR
Moisture Sensitivity Level1 (Unlimited)