参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current10.9 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Rds On - Drain-Source Resistance24 mOhms
MXHTS85423999
Qg - Gate Charge12 nC
Mounting StyleSMD/SMT
Package / CaseSO-8
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingReel
PackagingMouseReel
PackagingCut Tape
Factory Pack Quantity2500
CNHTS8541290000
BrandVishay Semiconductors
ManufacturerVishay
SeriesSI4
Channel ModeEnhancement
TARIC8541290000
RoHS Details
DescriptionMOSFET 30V Vds 20V Vgs SO-8
Product CategoryMOSFET
ImageVishay Semiconductors SI4128DY-T1-GE3
Product TypeMOSFET
SubcategoryMOSFETs
Unit Weight0.006596 oz
Part # AliasesSI4128DY-GE3
USHTS8542390001
Pd - Power Dissipation5 W
TradenameTrenchFET
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)