参数项参数值
参数项参数值
Forward Transconductance - Min2.6 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.8 V
TechnologySi
Id - Continuous Drain Current5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time6.4 ns
Rds On - Drain-Source Resistance600 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time20 ns
Width2.38 mm
MXHTS85412999
Height6.22 mm
Length6.73 mm
KRHTS8541299000
CNHTS8541210000
Qg - Gate Charge15 nC
Package / CaseTO-251-3
Mounting StyleThrough Hole
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 175 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time12 ns
PackagingTube
TARIC8541290000
RoHS Details
BrandInfineon / IR
ImageInfineon / IR IRFU220NPBF
Unit Weight0.139332 oz
SubcategoryMOSFETs
Factory Pack Quantity3000
Product CategoryMOSFET
Product TypeMOSFET
ManufacturerInfineon
Pd - Power Dissipation43 W
DescriptionMOSFET MOSFT 200V 5A 600mOhm 15nC
USHTS8541290095
Vds - Drain-Source Breakdown Voltage200 V
Number of Channels1 Channel
Rise Time11 ns