DMC1229UFDB-7

DMC1229UFDB-7

厂牌：DIODES(美台)

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000049875562

描述：场效应管(MOSFET) 1.4W 12V 5.6A；3.8A 1个N沟道+1个P沟道

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商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min5.5 S, 6.5 S

ConfigurationDual

Vgs th - Gate-Source Threshold Voltage1 V

TechnologySi

Id - Continuous Drain Current3.8 A, 5.6 A

Transistor PolarityN-Channel, P-Channel

Vgs - Gate-Source Voltage- 8 V, + 8 V

KRHTS8541299000

Typical Turn-On Delay Time5 ns, 5.7 ns

ManufacturerDiodes Incorporated

Minimum Operating Temperature- 55 C

JPHTS8541290100

RoHS Details

CAHTS8541290000

Rds On - Drain-Source Resistance29 mOhms, 61 mOhms

Typical Turn-Off Delay Time16.6 ns, 27.8 ns

Package / CaseDFN-2020-6

Factory Pack Quantity3000

BrandDiodes Incorporated

TARIC8541290000

Maximum Operating Temperature+ 150 C

Mounting StyleSMD/SMT

PackagingReel

PackagingCut Tape

PackagingMouseReel

ImageDiodes Incorporated DMC1229UFDB-7

SubcategoryMOSFETs

Qg - Gate Charge10.5 nC, 10.7 nC

Product CategoryMOSFET

DescriptionMOSFET Comp ENH Mode FET 12V Vdss 8V VGss

Product TypeMOSFET

MXHTS85412999

SeriesDMC1229

USHTS8541290095

Channel ModeEnhancement

Unit Weight0.687842 oz

Fall Time4.1 ns, 26.4 ns

CNHTS8541290000

Pd - Power Dissipation1.4 W

Vds - Drain-Source Breakdown Voltage12 V

Number of Channels2 Channel

Rise Time10.5 ns, 11.5 ns