参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Vgs th - Gate-Source Threshold Voltage1 V
Transistor PolarityN-Channel
Id - Continuous Drain Current300 mA
Vgs - Gate-Source Voltage- 20 V, + 20 V
Height1 mm
Length2.2 mm
ManufacturerDiodes Incorporated
Minimum Operating Temperature- 65 C
ProductMOSFET Small Signal
RoHS Details
Rds On - Drain-Source Resistance2 Ohms
Transistor Type1 N-Channel
Factory Pack Quantity3000
Package / CaseSOT-323-3
BrandDiodes Incorporated
Maximum Operating Temperature+ 150 C
Width1.35 mm
Mounting StyleSMD/SMT
PackagingReel
PackagingMouseReel
PackagingCut Tape
ImageDiodes Incorporated DMN601WK-7
SubcategoryMOSFETs
Product CategoryMOSFET
DescriptionMOSFET N-Channel
Product TypeMOSFET
SeriesDMN60
Channel ModeEnhancement
Unit Weight0.000176 oz
Pd - Power Dissipation200 mW
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel