STD1NK80Z-1

STD1NK80Z-1

厂牌：ST(意法半导体)

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000049875614

描述：MOSFET N-CH 800V 1A IPAK

商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min0.8 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage3.75 V

TechnologySi

Id - Continuous Drain Current1 A

Transistor PolarityN-Channel

Height6.2 mm

Length6.6 mm

Vgs - Gate-Source Voltage- 30 V, + 30 V

ManufacturerSTMicroelectronics

KRHTS8541299000

PackagingTube

Typical Turn-On Delay Time8 ns

Factory Pack Quantity3000

BrandSTMicroelectronics

Minimum Operating Temperature- 55 C

JPHTS8541290100

Rds On - Drain-Source Resistance16 Ohms

Maximum Operating Temperature+ 150 C

Transistor Type1 N-Channel

Typical Turn-Off Delay Time22 ns

Package / CaseTO-251-3

CAHTS8541290000

SubcategoryMOSFETs

TARIC8541210000

RoHS Details

Product TypeMOSFET

Width2.4 mm

Mounting StyleThrough Hole

ImageSTMicroelectronics STD1NK80Z-1

Qg - Gate Charge7.7 nC

DescriptionMOSFET N-Ch, 800V-13ohms 1A

MXHTS85412101

Product CategoryMOSFET

SeriesSTQ1NK80ZR-AP

USHTS8541290095

Channel ModeEnhancement

Unit Weight0.139332 oz

Fall Time55 ns

CNHTS8541210000

Pd - Power Dissipation45 W

Vds - Drain-Source Breakdown Voltage800 V

Number of Channels1 Channel

Rise Time30 ns