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STF13N65M2
厂牌：ST(意法半导体)
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000049875659
描述：场效应管(MOSFET) 25W 650V 10A 1个N沟道
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current10 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 25 V, + 25 V
Typical Turn-On Delay Time11 ns
Rds On - Drain-Source Resistance370 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time38 ns
Qg - Gate Charge17 nC
Package / CaseTO-220-3
Mounting StyleThrough Hole
PackagingTube
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
BrandSTMicroelectronics
SeriesSTF13N65M2
ManufacturerSTMicroelectronics
Product CategoryMOSFET
Channel ModeEnhancement
Factory Pack Quantity1000
RoHS Details
Product TypeMOSFET
Fall Time12 ns
DescriptionMOSFET PTD HIGH VOLTAGE
ImageSTMicroelectronics STF13N65M2
Unit Weight0.081130 oz
SubcategoryMOSFETs
Pd - Power Dissipation25 W
TradenameMDmesh
Vds - Drain-Source Breakdown Voltage650 V
Number of Channels1 Channel
Rise Time7.8 ns