SUP85N10-10-E3

SUP85N10-10-E3

厂牌：VISHAY(威世)

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000049875710

描述：MOSFET N-CH D-S 100V TO220AB

下载数据手册

商品参数

参数项参数值

参数项参数值

ConfigurationSingle

Forward Transconductance - Min25 S

TechnologySi

Vgs th - Gate-Source Threshold Voltage1 V

Transistor PolarityN-Channel

Id - Continuous Drain Current85 A

Vgs - Gate-Source Voltage- 20 V, + 20 V

Minimum Operating Temperature- 55 C

Typical Turn-On Delay Time12 ns

Rds On - Drain-Source Resistance8.5 mOhms

Transistor Type1 N-Channel

Maximum Operating Temperature+ 175 C

Typical Turn-Off Delay Time55 ns

ImageVishay Semiconductors SUP85N10-10-E3

Package / CaseTO-220-3

PackagingTube

BrandVishay Semiconductors

SubcategoryMOSFETs

Product CategoryMOSFET

Mounting StyleThrough Hole

DescriptionMOSFET 100V N-CH 175 DEG.C

ManufacturerVishay

Factory Pack Quantity50

Qg - Gate Charge160 nC

RoHS Details

SeriesSUP

Product TypeMOSFET

Channel ModeEnhancement

Fall Time130 ns

Unit Weight0.211644 oz

Pd - Power Dissipation250 W

TradenameTrenchFET

Vds - Drain-Source Breakdown Voltage100 V

Number of Channels1 Channel

Rise Time90 ns