SI4116DY-T1-GE3

SI4116DY-T1-GE3

厂牌：VISHAY(威世)

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000049875778

描述：MOSFET N-CH 25V 18A 8-SOIC

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商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min68 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage600 mV

TechnologySi

Transistor PolarityN-Channel

Id - Continuous Drain Current18 A

Vgs - Gate-Source Voltage- 12 V, + 12 V

KRHTS8541299000

Height1.75 mm

JPHTS8541290100

Typical Turn-On Delay Time7 ns

Minimum Operating Temperature- 55 C

CAHTS8541290000

Rds On - Drain-Source Resistance8.6 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time31 ns

RoHS Details

Package / CaseSO-8

Factory Pack Quantity2500

ImageVishay Semiconductors SI4116DY-T1-GE3

PackagingReel

PackagingCut Tape

PackagingMouseReel

Width3.9 mm

Maximum Operating Temperature+ 150 C

Mounting StyleSMD/SMT

TARIC8541290000

BrandVishay Semiconductors

ManufacturerVishay

DescriptionMOSFET 25V Vds 12V Vgs SO-8

SubcategoryMOSFETs

Product CategoryMOSFET

Qg - Gate Charge56 nC

MXHTS85412999

SeriesSI4

Product TypeMOSFET

USHTS8541290095

Channel ModeEnhancement

Unit Weight0.006596 oz

Fall Time9 ns

CNHTS8541290000

Part # AliasesSI4466DY-T1-E3-S

Pd - Power Dissipation5 W

TradenameTrenchFET

Vds - Drain-Source Breakdown Voltage25 V

Number of Channels1 Channel

Rise Time10 ns

Moisture Sensitivity Level1 (Unlimited)