参数项参数值
参数项参数值
DC Current Gain hFE Max500
Gain Bandwidth Product fT150 MHz
Collector- Base Voltage VCBO45 V, 50 V
Maximum DC Collector Current2 A
Collector- Emitter Voltage VCEO Max45 V, 40 V
Continuous Collector Current2 A
ConfigurationDual
TechnologySi
Transistor PolarityNPN, PNP
Emitter- Base Voltage VEBO5 V
Width3.7 mm
Collector-Emitter Saturation Voltage500 mV
Height1.6 mm
Length6.7 mm
DC Collector/Base Gain hfe Min500 at 100 mA, 2 V at NPN, 400 at 1 A, 2 V at NPN, 150 at 2 A, 2 V at NPN, 300 at 10 mA, 2 V at PNP, 250 at 500 mA, 2 V at PNP, 200 at 1 A, 2 V at PNP, 150 at 2 A, 2 V at PNP
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Package / CaseSM-8
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Minimum Operating Temperature- 55 C
Factory Pack Quantity1000
CNHTS8541290000
BrandDiodes Incorporated
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT NPN/PNP HighG 40V
ImageDiodes Incorporated ZDT6790TA
SeriesZDT6790
TARIC8541290000
ManufacturerDiodes Incorporated
Product CategoryBipolar Transistors - BJT
RoHS Details
Unit Weight4.127054 oz
SubcategoryTransistors
Pd - Power Dissipation2.75 W
USHTS8541290075