参数项参数值
参数项参数值
Forward Transconductance - Min105 S
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current60 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time25 ns
Rds On - Drain-Source Resistance5.8 mOhms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time40 ns
Qg - Gate Charge65 nC
Package / CasePowerPAK-SO-8
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
BrandVishay Semiconductors
ManufacturerVishay
Product CategoryMOSFET
SeriesSI7
Factory Pack Quantity3000
Channel ModeEnhancement
RoHS Details
Fall Time15 ns
Product TypeMOSFET
DescriptionMOSFET 40V Vds 20V Vgs PowerPAK SO-8
ImageVishay Semiconductors SI7938DP-T1-GE3
Unit Weight0.017870 oz
SubcategoryMOSFETs
Part # AliasesSI7938DP-GE3
Pd - Power Dissipation46 W
TradenameTrenchFET
Vds - Drain-Source Breakdown Voltage40 V
Number of Channels2 Channel
Rise Time19 ns