参数项参数值
参数项参数值
Gain Bandwidth Product fT140 MHz
Collector- Base Voltage VCBO80 V
Maximum DC Collector Current6 A
Collector- Emitter Voltage VCEO Max30 V
Continuous Collector Current6 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO7 V
Width2.48 mm
Height1.5 mm
Length4.5 mm
MXHTS85412999
KRHTS8541299000
Package / CaseSOT-89-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingReel
PackagingMouseReel
Factory Pack Quantity1000
CNHTS8541290000
BrandDiodes Incorporated
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT 30V NPN Low Sat
ImageDiodes Incorporated ZXTN2007ZTA
SeriesZXTN2007
TARIC8541290000
ManufacturerDiodes Incorporated
Product CategoryBipolar Transistors - BJT
RoHS Details
SubcategoryTransistors
Pd - Power Dissipation2100 mW
USHTS8541290075