参数项参数值
参数项参数值
Forward Transconductance - Min8 S
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current8 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time5.03 ns
ManufacturerDiodes Incorporated
Minimum Operating Temperature- 55 C
RoHS Details
Rds On - Drain-Source Resistance14 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time26.33 ns
Package / CaseSO-8
Factory Pack Quantity2500
BrandDiodes Incorporated
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
ImageDiodes Incorporated DMN4800LSSL-13
PackagingCut Tape
PackagingMouseReel
PackagingReel
SubcategoryMOSFETs
Qg - Gate Charge8.7 nC
Product CategoryMOSFET
DescriptionMOSFET MOSFET BVDSS: 25V-30 SO-8,2.5K
Product TypeMOSFET
SeriesDMN4800
Channel ModeEnhancement
Unit Weight0.002610 oz
Fall Time8.55 ns
Pd - Power Dissipation1.46 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time4.5 ns