参数项参数值
参数项参数值
Gain Bandwidth Product fT50 MHz
Collector- Base Voltage VCBO300 V
Maximum DC Collector Current0.5 A
Collector- Emitter Voltage VCEO Max300 V
ConfigurationDual
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
MXHTS85412101
Length3 mm
Width1.6 mm
Height1.1 mm
KRHTS8541219000
DC Collector/Base Gain hfe Min25
Minimum Operating Temperature- 55 C
JPHTS8541210101
CAHTS8541210000
CNHTS8541210000
Package / CaseSOT-26-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Factory Pack Quantity3000
PackagingReel
PackagingCut Tape
PackagingMouseReel
ImageDiodes Incorporated MMDTA42-7-F
BrandDiodes Incorporated
Product CategoryBipolar Transistors - BJT
TARIC8541210000
RoHS Details
DescriptionBipolar Transistors - BJT NPN BIPOLAR
SeriesMMDTA
Product TypeBJTs - Bipolar Transistors
ManufacturerDiodes Incorporated
SubcategoryTransistors
Unit Weight0.001058 oz
USHTS8541210075
Pd - Power Dissipation300 mW