参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.8 V
TechnologySi
Id - Continuous Drain Current44 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time25 ns
Width5.31 mm
Height20.7 mm
Rds On - Drain-Source Resistance46 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time44 ns
MXHTS85412999
Length15.87 mm
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Qg - Gate Charge72 nC
Mounting StyleThrough Hole
Package / CaseTO-247-3
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 175 C
CNHTS8541290000
ImageInfineon / IR IRFP4229PBF
PackagingTube
TARIC8541290000
RoHS Details
Channel ModeEnhancement
Fall Time19 ns
Factory Pack Quantity400
SubcategoryMOSFETs
Product CategoryMOSFET
BrandInfineon / IR
Unit Weight1.340411 oz
Product TypeMOSFET
DescriptionMOSFET MOSFT 250V 44A 46mOhm 72nC Qg
ManufacturerInfineon
USHTS8541290095
Pd - Power Dissipation310 W
Vds - Drain-Source Breakdown Voltage250 V
Number of Channels1 Channel
Rise Time27 ns