参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
MXHTS85412999
CNHTS8541290000
Rds On - Drain-Source Resistance3.8 mOhms
KRHTS8541299000
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
Mounting StyleSMD/SMT
PackagingCut Tape
PackagingMouseReel
PackagingReel
Package / CasePowerDI5060-K-8
Qg - Gate Charge282 nC
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
TARIC8541290000
RoHS Details
SubcategoryMOSFETs
ImageDiodes Incorporated DMP2002UPS-13
Factory Pack Quantity2500
SeriesDMP2002
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET 20V P-Ch Enh FET 12Vgss 104W
Channel ModeEnhancement
USHTS8541290095
Unit Weight0.004092 oz
Pd - Power Dissipation104 W
TradenamePowerDI
Number of Channels1 Channel