参数项参数值
参数项参数值
DC Current Gain hFE Max300 at 10 mA, 2 V
Gain Bandwidth Product fT215 MHz
Collector- Base Voltage VCBO100 V
Maximum DC Collector Current4.5 A
Collector- Emitter Voltage VCEO Max20 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO7 V
Width1.4 mm
Height1 mm
DC Collector/Base Gain hfe Min120
Length3.05 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Minimum Operating Temperature- 55 C
CNHTS8541290000
Factory Pack Quantity3000
BrandDiodes Incorporated
SeriesZXTN250
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT NPN 20V HIGH GAIN
ManufacturerDiodes Incorporated
TARIC8541290000
ImageDiodes Incorporated ZXTN25020DFHTA
Product CategoryBipolar Transistors - BJT
RoHS Details
Unit Weight0.000282 oz
SubcategoryTransistors
Pd - Power Dissipation1810 mW
USHTS8541290095