在线商城 
ZXMP6A13FQTA
厂牌：DIODES(美台)
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000049876153
描述：场效应管(MOSFET) 625mW 60V 900mA 1个P沟道
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min1.8 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Transistor PolarityP-Channel
Id - Continuous Drain Current1.1 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time1.6 ns
Rds On - Drain-Source Resistance400 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time11.2 ns
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge2.9 nC
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
JPHTS8541290100
CAHTS8541290000
PackagingCut Tape
PackagingReel
PackagingMouseReel
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CNHTS8541290000
Factory Pack Quantity3000
BrandDiodes Incorporated
SeriesZXMP6
Product TypeMOSFET
DescriptionMOSFET 60V P-Ch Enh Fet 20Vgs 625pD 219pF
Channel ModeEnhancement
ImageDiodes Incorporated ZXMP6A13FQTA
TARIC8541290000
ManufacturerDiodes Incorporated
Fall Time5.7 ns
Product CategoryMOSFET
RoHS Details
Unit Weight0.000282 oz
SubcategoryMOSFETs
Pd - Power Dissipation806 mW
USHTS8541290095
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time2.2 ns