参数项参数值
参数项参数值
Gain Bandwidth Product fT150 MHz
Collector- Base Voltage VCBO80 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max60 V
Continuous Collector Current1 A
ConfigurationSingle
Width1.2 mm
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Height0.6 mm
MXHTS85412101
Length1.6 mm
CNHTS8541210000
Collector-Emitter Saturation Voltage250 mV
KRHTS8541219000
Minimum Operating Temperature- 55 C
JPHTS8541210101
CAHTS8541210000
Package / CaseSOT-563-6
Mounting StyleSMD/SMT
PackagingMouseReel
PackagingReel
PackagingCut Tape
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
TARIC8541210000
RoHS Details
SubcategoryTransistors
ImageDiodes Incorporated DSS4160V-7
Factory Pack Quantity3000
SeriesDSS41
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT LOW VCE(SAT) NPN SMT
USHTS8541210095
Unit Weight0.000106 oz
Pd - Power Dissipation600 mW