参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage500 mV
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current4 A
Vgs - Gate-Source Voltage- 12 V, + 12 V
Typical Turn-On Delay Time1.9 ns
MXHTS85412101
CNHTS8541210000
Rds On - Drain-Source Resistance52 mOhms
KRHTS8541299000
Transistor Type1 N-Channel
Typical Turn-Off Delay Time10.3 ns
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
Mounting StyleSMD/SMT
Package / CaseSOT-323-3
PackagingReel
PackagingMouseReel
PackagingCut Tape
Qg - Gate Charge11.7 nC
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
TARIC8541210000
RoHS Details
SubcategoryMOSFETs
ImageDiodes Incorporated DMN3065LW-7
Factory Pack Quantity3000
SeriesDMN3065
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET 30V N-Ch Enh Mode 12Vgss 465pF 5.5nC
Channel ModeEnhancement
USHTS8541290095
Unit Weight0.000176 oz
Pd - Power Dissipation770 mW
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time1.6 ns