RYE002N05TCL

RYE002N05TCL

厂牌：ROHM(罗姆)

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000049876249

描述：MOSFETs 0.9V Drive Nch MOSFET

商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min200 ms

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage300 mV

TechnologySi

Id - Continuous Drain Current200 mA

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 8 V, + 8 V

Typical Turn-On Delay Time5 ns

Width0.8 mm

Rds On - Drain-Source Resistance9 Ohms

Transistor Type1 N-Channel

Height0.7 mm

Typical Turn-Off Delay Time17 ns

Length1.6 mm

MXHTS85412999

KRHTS8541299000

Mounting StyleSMD/SMT

Package / CaseSOT-416-3

JPHTS8541290100

CAHTS8541290000

Minimum Operating Temperature- 55 C

Maximum Operating Temperature+ 150 C

CNHTS8541290000

ProductMOSFET

TARIC8541290000

RoHS Details

ImageROHM Semiconductor RYE002N05TCL

PackagingCut Tape

PackagingMouseReel

PackagingReel

Channel ModeEnhancement

SubcategoryMOSFETs

BrandROHM Semiconductor

Fall Time43 ns

ManufacturerROHM Semiconductor

SeriesRYE002N05

Unit Weight0.000212 oz

Product CategoryMOSFET

Factory Pack Quantity3000

USHTS8541290095

Product TypeMOSFET

DescriptionMOSFET 0.9V Drive Nch MOSFET

Part # AliasesRYE002N05

Pd - Power Dissipation150 mW

Vds - Drain-Source Breakdown Voltage50 V

Number of Channels1 Channel

Rise Time8 ns

TypePower MOSFET