参数项参数值
参数项参数值
Gain Bandwidth Product fT200 MHz
Collector- Base Voltage VCBO- 140 V
Maximum DC Collector Current- 2 A
Collector- Emitter Voltage VCEO Max- 100 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 7 V
Width1.4 mm
Collector-Emitter Saturation Voltage- 215 mV
Height1 mm
MXHTS85412999
Length3.05 mm
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingCut Tape
ImageDiodes Incorporated ZXTP25100BFHTA
TARIC8541290000
PackagingReel
PackagingMouseReel
RoHS Details
SeriesZXTP25100
SubcategoryTransistors
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
BrandDiodes Incorporated
Product TypeBJTs - Bipolar Transistors
Unit Weight0.000282 oz
DescriptionBipolar Transistors - BJT PNP Medium Power
ManufacturerDiodes Incorporated
USHTS8541290095
Pd - Power Dissipation1810 mW
Moisture Sensitivity Level1 (Unlimited)