参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current240 mA
Vgs - Gate-Source Voltage- 30 V, + 30 V
MXHTS85412999
KRHTS8541299000
CNHTS8541290000
Rds On - Drain-Source Resistance5 Ohms
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
Package / CaseSOT-323-3
Mounting StyleSMD/SMT
Qg - Gate Charge821 pC
Maximum Operating Temperature+ 150 C
PackagingMouseReel
PackagingReel
PackagingCut Tape
RoHS Details
BrandDiodes Incorporated
Factory Pack Quantity3000
Product CategoryMOSFET
ImageDiodes Incorporated DMN67D8LW-7
TARIC8541290000
SeriesDMN67
Product TypeMOSFET
ManufacturerDiodes Incorporated
DescriptionMOSFET MOSFET BVDSS
SubcategoryMOSFETs
Channel ModeEnhancement
Unit Weight0.000176 oz
USHTS8541290095
Pd - Power Dissipation470 mW
Number of Channels1 Channel