参数项参数值
参数项参数值
DC Current Gain hFE Max25 at 1 mA, 10 V
Gain Bandwidth Product fT50 MHz
Collector- Base Voltage VCBO300 V
Maximum DC Collector Current0.2 A
Collector- Emitter Voltage VCEO Max300 V
Continuous Collector Current0.2 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage0.5 V
DC Collector/Base Gain hfe Min25
Width1.4 mm
Height1 mm
Length3.05 mm
MXHTS85412999
KRHTS8541219000
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
CNHTS8541290000
PackagingMouseReel
PackagingReel
PackagingCut Tape
TARIC8541210000
RoHS Details
Unit Weight0.000282 oz
SeriesFMMTA
ImageDiodes Incorporated FMMTA42TA
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
Pd - Power Dissipation330 mW
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
USHTS8541210095
DescriptionBipolar Transistors - BJT NPN High Voltage