参数项参数值
参数项参数值
DC Current Gain hFE Max82 at 500 mA, 3 V
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO120 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max80 V
Continuous Collector Current1 A
TechnologySi
ConfigurationSingle
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
DC Collector/Base Gain hfe Min82
Width2.5 mm
Height1.5 mm
Maximum Operating Temperature+ 150 C
MXHTS85412999
Length4.5 mm
KRHTS8541299000
TARIC8541290000
ManufacturerROHM Semiconductor
JPHTS8541290100
CNHTS8541290000
Mounting StyleSMD/SMT
CAHTS8541290000
PackagingReel
PackagingCut Tape
PackagingMouseReel
RoHS Details
Unit Weight0.004603 oz
BrandROHM Semiconductor
Pd - Power Dissipation2000 mW
Factory Pack Quantity1000
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
DescriptionBipolar Transistors - BJT DVR NPN 80V 1A
USHTS8541290095