参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current19.5 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 25 V, + 25 V
Typical Turn-On Delay Time8.2 ns
ManufacturerDiodes Incorporated
Minimum Operating Temperature- 55 C
RoHS Details
Rds On - Drain-Source Resistance16 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time65 ns
Package / CaseSO-8
Factory Pack Quantity2500
BrandDiodes Incorporated
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageDiodes Incorporated DMP3036SSS-13
SubcategoryMOSFETs
Qg - Gate Charge16.5 nC
Product CategoryMOSFET
DescriptionMOSFET P-Ch Enh Mode FET Vdss -30V 25Vgss
Product TypeMOSFET
SeriesDMP3036
Channel ModeEnhancement
Unit Weight0.002610 oz
Fall Time31.6 ns
Pd - Power Dissipation1.9 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time14 ns