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DMP2160UFDBQ-7
厂牌：DIODES(美台)
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000050035614
描述：MOSFET Dual P-Ch Enh FET VDSS -20V -12VGSS
商品参数
参数项参数值
参数项参数值
ConfigurationDual
TechnologySi
Vgs th - Gate-Source Threshold Voltage900 mV
Transistor PolarityP-Channel
Id - Continuous Drain Current3.8 A
Vgs - Gate-Source Voltage- 12 V, + 12 V
QualificationAEC-Q101
ManufacturerDiodes Incorporated
Typical Turn-On Delay Time11.51 ns
Minimum Operating Temperature- 55 C
RoHS Details
Rds On - Drain-Source Resistance68 mOhms
Factory Pack Quantity3000
Transistor Type2 P-Channel
Typical Turn-Off Delay Time55.34 ns
Package / CaseDFN-2020-6
BrandDiodes Incorporated
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
ImageDiodes Incorporated DMP2160UFDBQ-7
PackagingCut Tape
PackagingMouseReel
PackagingReel
SubcategoryMOSFETs
Qg - Gate Charge6.5 nC
Product CategoryMOSFET
DescriptionMOSFET Dual P-Ch Enh FET VDSS -20V -12VGSS
Product TypeMOSFET
SeriesDMP2160
Channel ModeEnhancement
Unit Weight0.687842 oz
Fall Time27.54 ns
Pd - Power Dissipation1.4 W
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels2 Channel
Rise Time12.09 ns