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STD12N60M2
厂牌：ST(意法半导体)
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000050036069
描述：MOSFET N-CHANNEL 600V 9A DPAK
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Vgs th - Gate-Source Threshold Voltage4 V
Transistor PolarityN-Channel
Id - Continuous Drain Current9 A
KRHTS8541299000
Vgs - Gate-Source Voltage- 25 V, + 25 V
JPHTS8541290100
ProductPower MOSFETs
Height2.4 mm
CAHTS8541290000
Length6.2 mm
Minimum Operating Temperature- 55 C
Typical Turn-On Delay Time9.2 ns
Product CategoryMOSFET
ImageSTMicroelectronics STD12N60M2
Rds On - Drain-Source Resistance395 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time56 ns
Maximum Operating Temperature+ 150 C
Package / CaseTO-252-3
PackagingCut Tape
PackagingMouseReel
PackagingReel
DescriptionMOSFET PTD HIGH VOLTAGE
Width6.6 mm
Mounting StyleSMD/SMT
TARIC8541290000
ManufacturerSTMicroelectronics
BrandSTMicroelectronics
Product TypeMOSFET
Qg - Gate Charge16 nC
Factory Pack Quantity2500
MXHTS85412999
RoHS Details
SubcategoryMOSFETs
SeriesSTD12N60M2
USHTS8541290095
Channel ModeEnhancement
Fall Time18 ns
Unit Weight0.139332 oz
CNHTS8541290000
Pd - Power Dissipation85 W
TradenameMDmesh
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel
Rise Time9.2 ns
TypeMDmesh M2
Moisture Sensitivity Level1 (Unlimited)