参数项参数值
参数项参数值
Gain Bandwidth Product fT50 MHz
Collector- Base Voltage VCBO- 350 V
Maximum DC Collector Current- 500 mA
Collector- Emitter Voltage VCEO Max- 350 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Width1.4 mm
Height1 mm
MXHTS85412101
Length3.05 mm
CNHTS8541210000
Collector-Emitter Saturation Voltage- 1 V
KRHTS8541219000
DC Collector/Base Gain hfe Min15
Minimum Operating Temperature- 55 C
JPHTS8541210101
CAHTS8541210000
Package / CaseSOT-23-3
PackagingCut Tape
PackagingReel
PackagingMouseReel
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
TARIC8541210000
RoHS Details
SubcategoryTransistors
ImageDiodes Incorporated DP350T05-7
Factory Pack Quantity3000
SeriesDP350T05
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT PNP BIPOLAR
USHTS8541210095
Unit Weight0.000282 oz
Pd - Power Dissipation300 mW