参数项参数值
参数项参数值
DC Current Gain hFE Max500 at 100 uA, 5 V
Gain Bandwidth Product fT700 MHz
Collector- Base Voltage VCBO55 V
Maximum DC Collector Current0.1 A
Collector- Emitter Voltage VCEO Max45 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Height1 mm
Length3 mm
QualificationAEC-Q101
ManufacturerNexperia
KRHTS8541219000
Factory Pack Quantity3000
PackagingCut Tape
PackagingMouseReel
PackagingReel
BrandNexperia
Minimum Operating Temperature- 65 C
JPHTS8541210101
Maximum Operating Temperature+ 150 C
Package / CaseSOT-23-3
CAHTS8541210000
SubcategoryTransistors
DC Collector/Base Gain hfe Min500 at 100 uA, 5 V, 500 at 1 mA, 5 V, 500 at 10 mA, 5 V
TARIC8541210000
RoHS Details
Width1.4 mm
Product TypeBJTs - Bipolar Transistors
Mounting StyleSMD/SMT
ImageNexperia PMBT6429,215
DescriptionBipolar Transistors - BJT TRANS SW TAPE-7
MXHTS85412101
Product CategoryBipolar Transistors - BJT
USHTS8541210075
Unit Weight0.000282 oz
CNHTS8541210000
Part # Aliases933872630215
Pd - Power Dissipation250 mW
Moisture Sensitivity Level1 (Unlimited)