参数项参数值
参数项参数值
DC Current Gain hFE Max63 at 150 mA, 2 V
Gain Bandwidth Product fT180 Mhz
Collector- Base Voltage VCBO100 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max80 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
QualificationAEC-Q101
Width2.6 mm
Height1.6 mm
Length4.6 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Package / CaseSOT-89-3
JPHTS8541290100
CAHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
CNHTS8541290000
Factory Pack Quantity1000
BrandNexperia
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT NPN 80V 1A
ImageNexperia BCX56-10,115
TARIC8541290000
ManufacturerNexperia
Product CategoryBipolar Transistors - BJT
RoHS Details
Unit Weight0.004603 oz
SubcategoryTransistors
Part # Aliases933663090115
Pd - Power Dissipation1250 mW
USHTS8541290075
Moisture Sensitivity Level1 (Unlimited)