参数项参数值
参数项参数值
Gain Bandwidth Product fT200 MHz
Collector- Base Voltage VCBO4 V
Maximum DC Collector Current0.6 A
Collector- Emitter Voltage VCEO Max- 60 V
Continuous Collector Current- 0.6 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
MXHTS85412101
Length2.1 mm
Width1.24 mm
Height0.85 mm
KRHTS8541219000
Collector-Emitter Saturation Voltage- 1.6 V
DC Collector/Base Gain hfe Min75
Minimum Operating Temperature- 55 C
JPHTS8541210101
Package / CaseSC-70-3
CAHTS8541210000
CNHTS8541210000
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Factory Pack Quantity3000
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageON Semiconductor MMBT2907AWT1G
BrandON Semiconductor
Product TypeBJTs - Bipolar Transistors
TARIC8541210000
DescriptionBipolar Transistors - BJT 600mA 60V PNP
RoHS Details
Product CategoryBipolar Transistors - BJT
SeriesMMBT2907AW
ManufacturerON Semiconductor
SubcategoryTransistors
Unit Weight0.000219 oz
USHTS8541210095
Pd - Power Dissipation150 mW
Moisture Sensitivity Level1 (Unlimited)