参数项参数值
参数项参数值
Forward Transconductance - Min0.4 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage- 1.2 V
TechnologySi
Id - Continuous Drain Current760 mA
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 6 V, + 6 V
Typical Turn-On Delay Time8 ns
Rds On - Drain-Source Resistance1 Ohms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time29 ns
Width0.8 mm
Height0.75 mm
Length1.6 mm
MXHTS85412101
KRHTS8541299000
Qg - Gate Charge2.1 nC
Package / CaseSC-75-3
Mounting StyleSMD/SMT
JPHTS8541210101
CAHTS8541210000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
BrandON Semiconductor
CNHTS8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
ProductMOSFET Small Signal
SeriesNTA4151P
Product CategoryMOSFET
ManufacturerON Semiconductor
TARIC8541210000
Product TypeMOSFET
Channel ModeEnhancement
RoHS Details
Factory Pack Quantity3000
Fall Time20.4 ns
ImageON Semiconductor NTA4151PT1G
SubcategoryMOSFETs
Unit Weight0.000097 oz
USHTS8541290095
Pd - Power Dissipation301 mW
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time8.2 ns
TypeMOSFET
Moisture Sensitivity Level1 (Unlimited)