参数项参数值
参数项参数值
DC Current Gain hFE Max25 at 1 mA, 10 V
Gain Bandwidth Product fT50 MHz
Collector- Base Voltage VCBO300 V
Maximum DC Collector Current0.1 A
Collector- Emitter Voltage VCEO Max300 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Height1.7 mm
Length6.7 mm
QualificationAEC-Q101
KRHTS8541299000
ManufacturerNexperia
Minimum Operating Temperature- 65 C
JPHTS8541290100
CAHTS8541290000
Package / CaseSOT-223-3
Factory Pack Quantity1000
DC Collector/Base Gain hfe Min25 at 1 mA, 10 V, 40 at 10 mA, 10 V, 40 at 30 mA, 10 V
BrandNexperia
TARIC8541290000
Maximum Operating Temperature+ 150 C
Width3.7 mm
RoHS Details
Mounting StyleSMD/SMT
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageNexperia PZTA42,115
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT TRANS HV TAPE-7
Product TypeBJTs - Bipolar Transistors
MXHTS85412999
USHTS8541290075
Unit Weight0.003951 oz
CNHTS8541290000
Part # Aliases933982060115
Pd - Power Dissipation1200 mW